BSC0902NSATMA1
In stock
- BSC0902NSATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 2.2 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 35 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 3.6 ns |
Forward transconductance - minimum | 55 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 48 W |
Rise Time | 5.2 ns |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 21 ns |
Typical turn-on delay time | 4.2 ns |
Width | 5.15 mm |
Unit weight | 200 mg |
Others include "BSC0902NSATMA1" parts
The following parts include 'BSC0902NSATMA1'
- bsc035n04ls-
- bsc059n04ls6atma1
- bsc016n04lsgatma
- bsc025n03ls
- bsc016n04lsgatma1
- bsc028n06nsscatma
- bsc082n10lsgatma
- bsc035n04ls-g
- bsc050n03lsgx
- bsc050ne2lsatma1
- bsc059n04ls6atma
- bsc014ne2lsix
- bsc042n03msgatma
- bsc016n06nsscatma
- bsc0500nsiatma
- bsc030n03ms
- bsc034n10ls5atma1
- bsc034n10ls5atma
- bsc025n03lsgatma
- bsc034n06nsatma1
BSC0902NSATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSC0902NSATMA1
Infineon
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
Learn More >
-
-
-
BSC0902NSATMA1
Infineon
Learn More >
-
-
-
BSC0902NSATMA1
Infineon
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
Learn More >
-
-
-
BSC0902NSATMA1
Infineon
Trans MOSFET N-CH 30V 24A 8-Pin TDSON EP T/R
Learn More >
-
- View All Newest Products from Omron