BSC0906NSATMA1
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Specification
工作温度范围 | -55°C~150°C(TJ) |
Vds-漏源极击穿电压 | 30V |
封装 | PowerTDFN-8 |
晶体管极性 | ,晶体管-FET,MOSFET-单 |
安装方式 | 表面贴装型 |
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BSC0906NSATMA1
Infineon
表面贴装型 N 通道 30V 18A(Ta),63A(Tc) 2.5W(Ta),30W(Tc) PG-TDSON-8-6
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BSC0906NSATMA1
Infineon
表面贴装型 N 通道 30V 18A(Ta),63A(Tc) 2.5W(Ta),30W(Tc) PG-TDSON-8-6
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BSC0906NSATMA1
Infineon
表面贴装型 N 通道 30V 18A(Ta),63A(Tc) 2.5W(Ta),30W(Tc) PG-TDSON-8-6
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BSC0906NSATMA1
Infineon
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
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