BSC0911NDATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TISON-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 40 A, 40 A |
Rds On - Drain-Source On-Resistance | 3.7 mOhms, 1.3 mOhms |
Vgs th - gate-source threshold voltage | 1.6 V, 1.6 V |
Vgs - gate-source voltage | 20 V, 20 V |
Qg - gate charge | 3 nC, 8.8 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Fall time | 2.2 ns, 4 ns |
Forward transconductance - minimum | 77 S, 130 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 2.5 W |
Rise Time | 2.8 ns, 5.4 ns |
Factory packing quantity | 5000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 15 ns, 25 ns |
Typical turn-on delay time | 3.3 ns, 3.8 ns |
Width | 5.15 mm |
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