BSC093N04LSGATMA1
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Specification
Vgs - 栅极-源极电压 | 20 V |
工作温度范围 | - 55 C~+ 150 C |
Pd-功率耗散 | 35 W |
Vds-漏源极击穿电压 | 40 V |
晶体管极性 | MOSFET |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 18 nC |
高度 | 1.27 mm |
Id-连续漏极电流 | 49 A |
封装 | PG-TDSON-8 |
长度 | 5.9 mm |
宽度 | 5.15 mm |
Rds On-漏源导通电阻 | 9.3 mOhms |
电路数量 | 1 Channel |
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BSC093N04LSGATMA1
Infineon
表面贴装型 N 通道 40V 13A(Ta),49A(Tc) 2.5W(Ta),35W(Tc) PG-TDSON-8-5
Learn More >
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BSC093N04LSGATMA1
Infineon
表面贴装型 N 通道 40V 13A(Ta),49A(Tc) 2.5W(Ta),35W(Tc) PG-TDSON-8-5
Learn More >
-
-
-
BSC093N04LSGATMA1
Infineon
表面贴装型 N 通道 40V 13A(Ta),49A(Tc) 2.5W(Ta),35W(Tc) PG-TDSON-8-5
Learn More >
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