BSC093N15NS5ATMA1
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Specification
Rds On-漏源导通电阻 | 9.3 mOhms |
Vds-漏源极击穿电压 | 150 V |
Qg-栅极电荷 | 33 nC |
高度 | 1.27 mm |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 87 A |
宽度 | 5.15 mm |
工作温度范围 | - 55 C~+ 150 C |
封装 | PG-TDSON-8-7 |
长度 | 5.9 mm |
Pd-功率耗散 | 139 W |
Vgs - 栅极-源极电压 | 10 V |
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表面贴装型 N 通道 150V 87A(Tc) 139W(Tc) PG-TDSON-8-7
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