BSC109N10NS3 G
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Specification
Vds-漏源极击穿电压 | 100 V |
高度 | 1.27 mm |
宽度 | 5.15 mm |
封装 | TDSON-8 |
Rds On-漏源导通电阻 | 10.9 mOhms |
Id-连续漏极电流 | 63 A |
长度 | 5.9 mm |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
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