BSC110N06NS3GATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 50 A |
Rds On - Drain-Source On-Resistance | 9 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 33 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 6 ns |
Forward transconductance - minimum | 25 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 50 W |
Rise Time | 77 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 14 ns |
Typical turn-on delay time | 10 ns |
Width | 5.15 mm |
Unit weight | 200 mg |
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