BSC112N06LDATMA1
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Specification
封装 | TDSON-8 |
工作温度范围 | - 55 C~+ 175 C |
Qg-栅极电荷 | 55 nC |
Pd-功率耗散 | 65 W |
晶体管极性 | MOSFET |
Vds-漏源极击穿电压 | 60 V |
电路数量 | 2 Channel |
Rds On-漏源导通电阻 | 11.2 mOhms |
Id-连续漏极电流 | 20 A |
Vgs - 栅极-源极电压 | 16 V |
安装方式 | SMD/SMT |
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