BSC123N08NS3 G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - continuous drain current | 55 A |
Rds On - Drain-Source On-Resistance | 10.3 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 25 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 4 ns |
Forward transconductance - minimum | 22 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 66 W |
Rise Time | 18 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 19 ns |
Typical turn-on delay time | 12 ns |
Width | 5.15 mm |
Unit weight | 100 mg |
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