BSC150N03LDGATMA1
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Specification
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 13.2 nC |
高度 | 1.27 mm |
封装 | PG-TDSON-8-4 |
晶体管极性 | MOSFET |
长度 | 5.9 mm |
宽度 | 5.15 mm |
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 2 Channel |
Id-连续漏极电流 | 20 A |
Pd-功率耗散 | 26 W |
Rds On-漏源导通电阻 | 12.5 mOhms |
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