BSC160N15NS5
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Specification
Vds-漏源极击穿电压 | 150V |
Id-连续漏极电流 | 56A(Tc) |
Vgs - 栅极-源极电压 | 4.6V @ 60uA |
Pd-功率耗散 | 96W(Tc) |
封装 | TDSON-8 |
晶体管极性 | N沟道 |
Rds On-漏源导通电阻 | 16mΩ @ 28A,10V |
Others include "BSC160N15NS5" parts
The following parts include 'BSC160N15NS5'
BSC160N15NS5 Releted Information
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BSC160N15NS5
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BSC160N15NS5ATMA1
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Trans MOSFET N-CH 150V 56A 8-Pin TDSON EP T/R
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BSC160N15NS5ATMA1
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Trans MOSFET N-CH 150V 56A 8-Pin TDSON EP T/R
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BSC160N15NS5ATMA1
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表面贴装型 N 通道 150V 56A(Tc) 96W(Tc) PG-TDSON-8-7
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BSC160N15NS5ATMA1
Infineon
Trans MOSFET N-CH 150V 56A 8-Pin TDSON EP T/R
Learn More >
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BSC160N15NS5ATMA1
Infineon
Trans MOSFET N-CH 150V 56A 8-Pin TDSON EP T/R
Learn More >
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BSC160N15NS5ATMA1
Infineon
表面贴装型 N 通道 150V 56A(Tc) 96W(Tc) PG-TDSON-8-7
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