BSC16DN25NS3GATMA1
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Specification
封装 | PG-TDSON-8-5 |
Vds-漏源极击穿电压 | 250V |
Pd-功率耗散 | 62.5W(Tc) |
工作温度范围 | -55°C~150°C(TJ) |
安装方式 | 表面贴装型 |
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BSC16DN25NS3GATMA1
Infineon
Trans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
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BSC16DN25NS3GATMA1
Infineon
Trans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
Learn More >
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BSC16DN25NS3GATMA1
Infineon
Trans MOSFET N-CH 250V 10.9A 8-Pin TDSON EP T/R
Learn More >
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BSC16DN25NS3GATMA1
Infineon
表面贴装型 N 通道 250V 10.9A(Tc) 62.5W(Tc) PG-TDSON-8-5
Learn More >
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