BSC320N20NS3G
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Specification
Vds-漏源极击穿电压 | 200V |
Pd-功率耗散 | 125W(Tc) |
Id-连续漏极电流 | 36A(Tc) |
晶体管极性 | N沟道 |
Vgs - 栅极-源极电压 | 4V @ 90uA |
Rds On-漏源导通电阻 | 32mΩ @ 36A,10V |
封装 | PG-TDSON-8 |
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FEATURED PRODUCT SOMRON
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BSC320N20NS3G
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BSC320N20NS3 G
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Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R
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BSC320N20NS3 G
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BSC320N20NS3GATMA1
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表面贴装型 N 通道 200V 36A(Tc) 125W(Tc) PG-TDSON-8-1
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BSC320N20NS3GATMA1
Infineon
表面贴装型 N 通道 200V 36A(Tc) 125W(Tc) PG-TDSON-8-1
Learn More >
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BSC320N20NS3GATMA1
Infineon
Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R
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