BSC900N20NS3 G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 15.2 A |
Rds On - Drain-Source On-Resistance | 77 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Forward transconductance - minimum | 16 S, 8 S |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 62.5 W |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Width | 5.15 mm |
Unit weight | 100 mg |
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