BSD235NH6327XTSA1
In stock
- BSD235NH6327XTSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-363-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V, 20 V |
Id - continuous drain current | 950 mA, 950 mA |
Rds On - Drain-Source On-Resistance | 266 mOhms, 266 mOhms |
Vgs th - gate-source threshold voltage | 700 mV, 700 mV |
Vgs - gate-source voltage | 12 V, 12 V |
Qg - gate charge | 320 pC, 320 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 1.2 ns, 1.2 ns |
Forward transconductance - minimum | 2 S, 2 S |
Height | 0.9 mm |
Length | 2 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 3.6 ns, 3.6 ns |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 4.5 ns, 4.5 ns |
Typical turn-on delay time | 3.8 ns, 3.8 ns |
Width | 1.25 mm |
Unit weight | 7.500 mg |
Others include "BSD235NH6327XTSA1" parts
The following parts include 'BSD235NH6327XTSA1'
BSD235NH6327XTSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSD235NH6327XTSA1
Infineon
Trans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R Automotive AEC-Q101
Learn More >
-
-
-
BSD235NH6327XTSA1
Infineon
MOSFET - 阵列 2 N-通道(双) 20V 950mA 500mW 表面贴装型
Learn More >
-
- View All Newest Products from Omron