BSD840NH6327XTSA1
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Specification
Qg-栅极电荷 | 0.26 nC |
高度 | 0.9 mm |
电路数量 | 2 Channel |
Vgs - 栅极-源极电压 | 2.5 V |
封装 | SOT-363-6 |
资格等级 | AEC-Q101 |
Pd-功率耗散 | 500 mW |
Rds On-漏源导通电阻 | 400 mOhms |
长度 | 2 mm |
宽度 | 1.25 mm |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 20 V |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 880 mA |
晶体管极性 | MOSFET |
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