BSL308PEH6327XTSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSOP-6 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V, - 30 V |
Id - continuous drain current | - 2 A, - 2 A |
Rds On - Drain-Source On-Resistance | 130 mOhms, 130 mOhms |
Vgs th - gate-source threshold voltage | - 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | - 1.2 nC, - 1.2 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 2.8 ns, 2.8 ns |
Forward transconductance - minimum | 4.6 S, 4.6 S |
Height | 1.1 mm |
Length | 3 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 7.7 ns, 7.7 ns |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 15.3 ns, 15.3 ns |
Typical turn-on delay time | 5.6 ns, 5.6 ns |
Width | 1.5 mm |
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