BSO130P03S H
In stock
- BSO130P03S H Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 11.3 A |
Rds On - Drain-Source On-Resistance | 13 mOhms |
Vgs - gate-source voltage | 25 V |
Qg - gate charge | - 61 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 62 ns |
Forward transconductance - minimum | 27 S |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2.36 W |
Rise Time | 16 ns |
Series | OptiMOS P |
Factory packing quantity | 2500 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 70 ns |
Typical turn-on delay time | 13 ns |
Width | 3.9 mm |
Unit weight | 540 mg |
Others include "BSO130P03S H" parts
The following parts include 'BSO130P03S H'
BSO130P03S H Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSO130P03SHXUMA1
Analog Devices Inc
Learn More >
-
-
-
BSO130P03SHXUMA1
Infineon
表面贴装型 P 通道 30V 9.2A(Ta) 1.56W(Ta) P-DSO-8
Learn More >
-
-
-
BSO130P03SHXUMA1
Infineon
表面贴装型 P 通道 30V 9.2A(Ta) 1.56W(Ta) P-DSO-8
Learn More >
-
- View All Newest Products from Omron