BSO220N03MDGXUMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V, 30 V |
Id - continuous drain current | 7.7 A, 7.7 A |
Rds On - Drain-Source On-Resistance | 18.3 mOhms, 18.3 mOhms |
Vgs th - gate-source threshold voltage | 1 V, 1 V |
Vgs - gate-source voltage | 20 V, 20 V |
Qg - gate charge | 10 nC, 10 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 3.4 ns, 3.4 ns |
Forward transconductance - minimum | 9 S, 9 S |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2 W |
Rise Time | 2.8 ns, 2.8 ns |
Series | OptiMOS 3M |
Factory packing quantity | 2500 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 6.4 ns, 6.4 ns |
Typical turn-on delay time | 5.7 ns, 5.7 ns |
Width | 3.9 mm |
Unit weight | 540 mg |
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