BSP135H6327XTSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-4 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 120 mA |
Rds On - Drain-Source On-Resistance | 25 Ohms |
Vgs th - gate-source threshold voltage | - 2.1 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 4.9 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Depletion |
Fall time | 182 ns |
Forward transconductance - minimum | 80 mS |
Height | 1.6 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 1.8 W |
Rise Time | 5.6 ns |
Series | BSP135vwswubussybvyqxadb |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 28 ns |
Typical turn-on delay time | 5.4 ns |
Width | 3.5 mm |
Unit weight | 112 mg |
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