BSP296N H6327
In stock
- BSP296N H6327 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-4 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 1.2 A |
Rds On - Drain-Source On-Resistance | 329 mOhms |
Vgs th - gate-source threshold voltage | 800 mV |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 6.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 5.2 ns |
Forward transconductance - minimum | 2.66 S |
Height | 1.6 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 1.8 W |
Rise Time | 3.8 ns |
Series | BSP296 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 18.4 ns |
Typical turn-on delay time | 3.5 ns |
Width | 3.5 mm |
Unit weight | 112 mg |
Others include "BSP296N H6327" parts
The following parts include 'BSP296N H6327'
BSP296N H6327 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSP296N H6327
Infineon
Learn More >
-
-
-
BSP296NH6327
Infineon
N沟道,100V,1.2A,600mΩ@10V SOT-223
Learn More >
-
-
-
BSP296NH6327XTSA1
Infineon
Trans MOSFET N-CH 100V 1.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Learn More >
-
-
-
BSP296NH6327XTSA1
Infineon
Trans MOSFET N-CH 100V 1.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Learn More >
-
-
-
BSP296NH6327XTSA1
Infineon
Trans MOSFET N-CH 100V 1.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Learn More >
-
-
-
BSP296NH6327XTSA1
Infineon
N沟道,100V,1.2A,600mΩ@10V
Learn More >
-
-
-
BSP296NH6327XTSA1
Infineon
Trans MOSFET N-CH 100V 1.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Learn More >
-
- View All Newest Products from Omron