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BSP299H6327XUSA1
Manufacturer:
Mfr. Part #:
BSP299H6327XUSA1
Allchips #:
Z001-BSP299H6327XUSA1-1-H-0000-X-N
Description:
MOSFET N-Ch 500V 400mA SOT-223-3
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SOT-223-4 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - continuous drain current | 400 mA |
| Rds On - Drain-Source On-Resistance | 3.1 Ohms |
| Vgs th - gate-source threshold voltage | 2.1 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | - |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 30 ns |
| Forward transconductance - minimum | 300 mS |
| Height | 1.6 mm |
| Length | 6.5 mm |
| Pd - Power Dissipation | 1.8 W |
| Rise Time | 15 ns |
| Series | BSP299 |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 55 ns |
| Typical turn-on delay time | 8 ns |
| Width | 3.5 mm |
| Unit weight | 112 mg |
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