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BSP318SH6327XTSA1
Manufacturer:
Mfr. Part #:
BSP318SH6327XTSA1
Allchips #:
R001-BSP318SH6327XTSA1-1-H-2411+-X-Y
Description:
N沟道,60V,2.6A,90mΩ@10V
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | SOT-223-4 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - continuous drain current | 2.6 A |
| Rds On - Drain-Source On-Resistance | 70 mOhms |
| Vgs th - gate-source threshold voltage | 1.2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 20 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 15 ns |
| Forward transconductance - minimum | 2.4 S |
| Height | 1.6 mm |
| Length | 6.5 mm |
| Pd - Power Dissipation | 1.8 W |
| Rise Time | 15 ns |
| Series | BSP318 |
| Factory packing quantity | 1000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 20 ns |
| Typical turn-on delay time | 12 ns |
| Width | 3.5 mm |
| Unit weight | 112 mg |
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N沟道,60V,2.6A,90mΩ@10V
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