BSP322PH6327XTSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-4 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 100 V |
Id - continuous drain current | - 1 A |
Rds On - Drain-Source On-Resistance | 1 Ohms |
Vgs th - gate-source threshold voltage | - 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 12.4 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 8.3 ns |
Forward transconductance - minimum | 0.7 S |
Height | 1.6 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 1.8 W |
Rise Time | 4.3 ns |
Series | BSP322 |
Factory packing quantity | 1000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 21.2 ns |
Typical turn-on delay time | 4.6 ns |
Width | 3.5 mm |
Unit weight | 112 mg |
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