BSR92PH6327XTSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 250 V |
Id - continuous drain current | - 140 mA |
Rds On - Drain-Source On-Resistance | 11 Ohms |
Vgs th - gate-source threshold voltage | - 1.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | - 3.6 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Development Kit | - |
Fall time | 71 ns |
Forward transconductance - minimum | 0.1 S |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 6.3 ns |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 75 ns |
Typical turn-on delay time | 6.4 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
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表面贴装型 P 通道 250V 140mA(Ta) 500mW(Tc) PG-SC-59
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