BSS209PWH6327XTSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 630 mA |
Rds On - Drain-Source On-Resistance | 379 mOhms |
Vgs th - gate-source threshold voltage | - 1.2 V |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | - 1.3 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 4.6 ns |
Forward transconductance - minimum | 870 mS |
Height | 0.9 mm |
Length | 2 mm |
Pd - Power Dissipation | 300 mW |
Rise Time | 7 ns |
Series | BSS209 |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 6 ns |
Typical turn-on delay time | 2.6 ns |
Width | 1.25 mm |
Unit weight | 5 mg |
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