BSS214NW H6327
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 1.5 A |
Rds On - Drain-Source On-Resistance | 106 mOhms |
Vgs th - gate-source threshold voltage | 700 mV |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | 800 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AECQ1000 |
Channel mode | Enhancement |
Fall time | 1.4 ns |
Forward transconductance - minimum | 4 S |
Height | 0.9 mm |
Length | 2 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 7.8 ns |
Series | BSS214 |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 6.8 ns |
Typical turn-on delay time | 4.1 ns |
Width | 1.25 mm |
Unit weight | 5 mg |
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