BSS223PW H6327
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 390 mA |
Rds On - Drain-Source On-Resistance | 700 mOhms |
Vgs th - gate-source threshold voltage | - 1.2 V |
Vgs - gate-source voltage | 12 V |
Qg - gate charge | - 620 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 3.2 ns |
Forward transconductance - minimum | 350 mS |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 250 mW |
Rise Time | 5 ns |
Series | BSS223 |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 5.1 ns |
Typical turn-on delay time | 3.8 ns |
Width | 1.3 mm |
Unit weight | 5 mg |
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