BSS308PEH6327XTSA1
In stock
- BSS308PEH6327XTSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 2 A |
Rds On - Drain-Source On-Resistance | 62 mOhms |
Vgs th - gate-source threshold voltage | - 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | - 5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 2.8 ns |
Forward transconductance - minimum | 4.6 S |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 7.7 ns |
Series | BSS308 |
Factory packing quantity | 3000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 15.3 ns |
Typical turn-on delay time | 5.6 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
Others include "BSS308PEH6327XTSA1" parts
The following parts include 'BSS308PEH6327XTSA1'
BSS308PEH6327XTSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSS308PEH6327XTSA1
Infineon
MOSFET P-Ch -30V -2A SOT-23-3
Learn More >
-
-
-
BSS308PEH6327XTSA1
Infineon
BSS308PEH6327XTSA1
Learn More >
-
-
-
BSS308PEH6327XTSA1
Infineon
BSS308PEH6327XTSA1
Learn More >
-
- View All Newest Products from Omron