BSS806NEH6327XTSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 2.3 A |
Rds On - Drain-Source On-Resistance | 41 mOhms |
Vgs th - gate-source threshold voltage | 300 mV |
Vgs - gate-source voltage | 8 V |
Qg - gate charge | 1.7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 3.7 ns |
Forward transconductance - minimum | 9 S |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 9.9 ns |
Series | BSS806 |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 12 ns |
Typical turn-on delay time | 7.5 ns |
Width | 1.3 mm |
Unit weight | 8 mg |
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