BSS816NW H6327
In stock
- BSS816NW H6327 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 1.4 A |
Rds On - Drain-Source On-Resistance | 107 mOhms |
Vgs th - gate-source threshold voltage | 300 mV |
Vgs - gate-source voltage | 8 V |
Qg - gate charge | 600 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 2.2 ns |
Forward transconductance - minimum | 4.9 S |
Height | 1.1 mm |
Length | 2.9 mm |
Pd - Power Dissipation | 500 mW (1/2 W) |
Rise Time | 9 ns |
Series | BSS816wufvtvwdaaededurzuubzefetaufca |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 11 ns |
Typical turn-on delay time | 5.3 ns |
Width | 1.3 mm |
Unit weight | 5 mg |
Others include "BSS816NW H6327" parts
The following parts include 'BSS816NW H6327'
BSS816NW H6327 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BSS816NWH6327
Infineon
SOT-323-3
Learn More >
-
-
-
BSS816NW H6327
Infineon
Learn More >
-
-
-
BSS816NW H6327
Infineon
Learn More >
-
-
-
BSS816NWH6327XTSA1
Infineon
Learn More >
-
-
-
BSS816NWH6327XTSA1
Infineon
Learn More >
-
-
-
BSS816NWH6327XTSA1
Infineon
Learn More >
-
- View All Newest Products from Omron