BSS87 H6327
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-89-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 240 V |
Id - continuous drain current | 260 mA |
Rds On - Drain-Source On-Resistance | 3.9 Ohms |
Vgs th - gate-source threshold voltage | 800 mV |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 5.5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 27.3 ns |
Forward transconductance - minimum | 160 mS |
Height | 1.5 mm |
Length | 4.5 mm |
Pd - Power Dissipation | 1 W |
Rise Time | 3.5 ns |
Series | BSS87 |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 17.6 ns |
Typical turn-on delay time | 3.7 ns |
Width | 2.5 mm |
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