BSZ019N03LSATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 40 A |
Rds On - Drain-Source On-Resistance | 1.6 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 44 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 4.6 ns |
Forward transconductance - minimum | 70 S |
Height | 1.1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 69 W |
Rise Time | 6.8 ns |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 28 ns |
Typical turn-on delay time | 5.4 ns |
Width | 3.3 mm |
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