BSZ034N04LSATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 40 A |
Rds On - Drain-Source On-Resistance | 2.7 mOhms |
Vgs th - gate-source threshold voltage | 1.2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 35 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 3 ns |
Forward transconductance - minimum | 46 S |
Height | 1.1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 52 W |
Rise Time | 4 ns |
Series | OptiMOS 5 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 19 ns |
Typical turn-on delay time | 4 ns |
Width | 3.3 mm |
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BSZ034N04LSATMA1
Infineon
表面贴装型 N 通道 40V 19A(Ta),40A(Tc) 2.1W(Ta),52W(Tc) PG-TSDSON-8-FL
Learn More >
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BSZ034N04LSATMA1
Infineon
表面贴装型 N 通道 40V 19A(Ta),40A(Tc) 2.1W(Ta),52W(Tc) PG-TSDSON-8-FL
Learn More >
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