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BSZ058N03LSGATMA1
Manufacturer:
Mfr. Part #:
BSZ058N03LSGATMA1
Allchips #:
R001-BSZ058N03LSGATMA1-1-H-2324-X-N
Description:
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TSDSON-8 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - continuous drain current | 40 A |
| Rds On - Drain-Source On-Resistance | 4.8 mOhms |
| Vgs th - gate-source threshold voltage | 1 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 30 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 3.2 ns |
| Forward transconductance - minimum | 36 S |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Pd - Power Dissipation | 45 W |
| Rise Time | 3.6 ns |
| Series | OptiMOS 3 |
| Factory packing quantity | 5000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 19 ns |
| Typical turn-on delay time | 4.6 ns |
| Width | 3.3 mm |
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表面贴装型 N 通道 30V 15A（Ta），40A（Tc） 2.1W（Ta），45W（Tc） PG-TSDSON-8
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