BSZ0703LSATMA1
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Specification
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | - 20 V, + 20 V |
Vds-漏源极击穿电压 | 60 V |
Qg-栅极电荷 | 10 nC |
封装 | TSDSON-8 |
Pd-功率耗散 | 46 W |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 7.3 mOhms |
安装方式 | SMD/SMT |
Id-连续漏极电流 | 40 A |
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