BSZ086P03NS3GATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 40 A |
Rds On - Drain-Source On-Resistance | 6.5 mOhms |
Vgs th - gate-source threshold voltage | - 3.1 V |
Vgs - gate-source voltage | 25 V |
Qg - gate charge | 57.5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 8 ns |
Forward transconductance - minimum | 30 S |
Height | 1.1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 69 W |
Rise Time | 46 ns |
Series | BSZ086P03 |
Factory packing quantity | 5000 |
Transistor type | 1 P-Channel |
Typical shutdown delay time | 35 ns |
Typical turn-on delay time | 16 ns |
Width | 3.3 mm |
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