BSZ097N04LSG
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Specification
晶体管极性 | N沟道 |
Rds On-漏源导通电阻 | 9.7mΩ @ 20A,10V |
Pd-功率耗散 | 2.1W |
Vgs - 栅极-源极电压 | 2V @ 14uA |
封装 | PG-TSDSON-8 |
Vds-漏源极击穿电压 | 40V |
Id-连续漏极电流 | 12A |
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