BSZ110N06NS3 G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 20 A |
Rds On - Drain-Source On-Resistance | 11 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Triple Source |
Channel mode | Enhancement |
Fall time | 6 ns |
Height | 1.1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 2.1 W |
Rise Time | 77 ns |
Series | OptiMOS 3 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 14 ns |
Typical turn-on delay time | 10 ns |
Width | 3.3 mm |
Unit weight | 91 mg |
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