BSZ110N08NS5ATMA1
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Specification
Vds-漏源极击穿电压 | 80 V |
工作温度范围 | - 55 C~+ 150 C |
Qg-栅极电荷 | 15 nC |
高度 | 1.1 mm |
Rds On-漏源导通电阻 | 11 mOhms |
晶体管极性 | MOSFET |
封装 | PG-TSDSON-8-FL |
Id-连续漏极电流 | 40 A |
Pd-功率耗散 | 50 W |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
长度 | 3.3 mm |
宽度 | 3.3 mm |
Vgs - 栅极-源极电压 | 10 V |
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