BSZ15DC02KDHXTMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TSDSON-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V, - 20 V |
Id - continuous drain current | 5.1 A, - 3.2 A |
Rds On - Drain-Source On-Resistance | 41 mOhms, 97 mOhms |
Vgs th - gate-source threshold voltage | 800 mV, - 1.4 V |
Vgs - gate-source voltage | 12 V, 12 V |
Qg - gate charge | 2.8 nC, - 4.5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 1.4 ns, 4.7 ns |
Forward transconductance - minimum | 5.5 S, 3.4 S |
Height | 1.1 mm |
Length | 3.3 mm |
Pd - Power Dissipation | 2.5 W |
Rise Time | 2 ns, 3.7 ns |
Transistor type | 1 N-Channel, 1 P-Channel |
Typical shutdown delay time | 12.2 ns, 11.3 ns |
Typical turn-on delay time | 4.9 ns, 7.4 ns |
Width | 3.3 mm |
Unit weight | 32 mg |
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