FF1000R17IE4BOSA1
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Specification
Pd-功率耗散 | 6250W |
类型 | ,晶体管-IGBT-模块 |
工作温度范围 | -40°C~150°C |
集电极—射极饱和电压 | 1700V |
安装方式 | 底座安装 |
封装 | 模块 |
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FF1000R17IE4BOSA1
Infineon
IGBT 模块 2 个独立式 1700V 6250W 底座安装 模块
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