FF200R12KE3HOSA1
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Specification
安装方式 | 底座安装 |
封装 | 模块 |
工作温度范围 | -40°C~125°C |
Pd-功率耗散 | 1050W |
集电极—射极饱和电压 | 1200V |
类型 | 分立半导体产品,晶体管-IGBT-模块 |
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