FF300R12KT4
In stock
- FF300R12KT4 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2.1 V |
Continuous collector current at 25 ° C | 450 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 1600 W |
Package / case | 62 mm |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
Unit weight | 335 g |
Others include "FF300R12KT4" parts
The following parts include 'FF300R12KT4'
FF300R12KT4 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
FF300R12KT4
Infineon
IGBT模块
Learn More >
-
-
-
FF300R12KT4
Infineon
IGBT模块
Learn More >
-
-
-
FF300R12KT4
Infineon
IGBT模块
Learn More >
-
-
-
FF300R12KT3HOSA1
Infineon
IGBT Module Trench Field Stop 2 Independent 1200V 480A 1450W Chassis Mount Module
Learn More >
-
-
-
FF300R12KT3HOSA1
Infineon
Trans IGBT Module N-CH 1200V 480A 1450W 7-Pin 62MM-1 Tray
Learn More >
-
-
-
FF300R12KT4HOSA1
Infineon
IGBT 模块 沟槽型场截止 半桥 1200V 450A 1600W 底座安装 模块
Learn More >
-
-
-
FF300R12KT3HOSA1
Infineon
IGBT Module Trench Field Stop 2 Independent 1200V 480A 1450W Chassis Mount Module
Learn More >
-
-
-
FF300R12KT4PHOSA1
Infineon
MOD IGBT MED PWR 62MM-1
Learn More >
-
- View All Newest Products from Omron