FF300R17KE4
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1700 V |
Collector - emitter saturation voltage | 2.45 V |
Continuous collector current at 25 ° C | 440 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 1800 W |
Package / case | 62 mm |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
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