FF75R12RT4
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Specification
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2.15 V |
Continuous collector current at 25 ° C | 75 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 395 W |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
Unit weight | 160 g |
Others include "FF75R12RT4" parts
The following parts include 'FF75R12RT4'
- ffc & fpc connectors
- ffv34e0107k-
- ffb0412ghn+delta+fab
- ff6-10-ac-qd0
- ffa.1s.275.ctac5
- ffa.0s.250.ctac2
- ffa.0s.302.clac2
- ffa.0s.302.clac2
- ff6-10-ac-0
- ffa.1e.250.ctac5
- ff450r12me4eb11bpsa
- ff450r12me4eb11
- ffmt720t
- ffa.1s.302.clac2
- ff150r12yt3boma
- ffb0412ghn+delta+fan
- ffb0912vh-f0
- ffa.1s.304.clac2
- ffa.0s.302.clak4
- ffa.1s.303.clac5
FF75R12RT4 Releted Information
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