FF900R12IP4
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2.1 V |
Continuous collector current at 25 ° C | 900 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 5.1 kW |
Package / case | PRIME2 |
The maximum working temperature | + 150 C |
Height | 38 mm |
Length | 172 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 3 |
Width | 89 mm |
Unit weight | 825 g |
Others include "FF900R12IP4" parts
The following parts include 'FF900R12IP4'
- ffc & fpc connectors
- ffb0412ghn+delta+fab
- ffa.1s.275.ctac5
- ffa.0s.250.ctac2
- ffa.0s.302.clac2
- ff6-10-ac-0
- ff450r12me4eb11bpsa
- ff450r12me4eb11
- ffmt720t
- ffb0412ghn+delta+fan
- ffb0912vh-f0
- ffa.1s.302.clac2
- ffs-20-qd0
- ffa.1s.250.ctac3
- ffa.0s.304.clac42
- ffa.1s.304.clac5
- ffa.1s.302.clac32
- ffa.2e.303.clac8
- ffa.1s.302.clal6
- ffa.00.250.ctlc3
FF900R12IP4 Releted Information
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