FP100R12KT4
In stock
- FP100R12KT4 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 2.1 V |
Continuous collector current at 25 ° C | 100 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 5.15 W |
Package / case | Econo 3 |
The maximum working temperature | + 150 C |
Height | 17 mm |
Length | 122 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 10 |
Width | 62 mm |
Unit weight | 300 g |
Others include "FP100R12KT4" parts
The following parts include 'FP100R12KT4'
- fpds1-
- fp35r12w2t4pbpsa
- fpf1203luc
- fpt1006-580-
- fp150r07n3e
- fpf2702m
- fpf2895uc
- fpf1504luc
- fp25r12w2t4pbpsa
- fp150r07n3e4bosa
- fpf1203lucx
- fp50r12kt3bosa
- fp11001_lisa2-m-pi
- fp13025_lisa2-w-pi
- fp11002_lisa2-w-pi
- fp11082_lisa2-w-cli
- fp11431_lisa2-www-cli
- fpbb-v3ri-069
- fp10996_lisa2-w-pi
- fp13031_lisa2-w-cli
FP100R12KT4 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
FP100R12KT4
Infineon
IGBT模块
Learn More >
-
-
-
FP100R12KT4
Infineon
Learn More >
-
-
-
FP100R12KT4
Infineon
IGBT模块
Learn More >
-
-
-
FP100R12KT4
Infineon
IGBT模块
Learn More >
-
-
-
FP100R12KT4BOSA1
Infineon
IGBT 模块 沟槽型场截止 三相反相器 1200V 100A 515W 底座安装 模块
Learn More >
-
-
-
FP100R12KT4BOSA1
Infineon
IGBT 模块 沟槽型场截止 三相反相器 1200V 100A 515W 底座安装 模块
Learn More >
-
-
-
FP100R12KT4BOSA1
Infineon
Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-3 Tray
Learn More >
-
-
-
FP100R12KT4BOSA1
Infineon
Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-3 Tray
Learn More >
-
-
-
FP100R12KT4BOSA1
Infineon
Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-3 Tray
Learn More >
-
-
-
FP100R12KT4BOSA1
Infineon
IGBT 模块 沟槽型场截止 三相反相器 1200V 100A 515W 底座安装 模块
Learn More >
-
- View All Newest Products from Omron