FP15R06W1E3
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Specification
Product | IGBT Silicon Modules |
Configuration | Array 7 |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2 V |
Continuous collector current at 25 ° C | 22 A |
Gate-emitter leakage current | 400 nA |
Pd - Power Dissipation | 81 W |
Package / case | EASY1B |
The maximum working temperature | + 150 C |
Height | 12 mm |
Length | 62.8 mm |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 24 |
Width | 33.8 mm |
Unit weight | 24 g |
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