FP25R12KT4
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | 3-Phase |
Collector - Emitter maximum voltage VCEO | 1200 V |
Collector - emitter saturation voltage | 1.85 V |
Continuous collector current at 25 ° C | 25 A |
Gate-emitter leakage current | 100 nA |
Pd - Power Dissipation | 160 W |
Package / case | Module |
The maximum working temperature | + 150 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | SMD/SMT |
Factory packing quantity | 10 |
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